 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of 1999 Apr 23 2002 Feb 04 Philips Semiconductors Product specification NPN general purpose transistors FEATURES * Low current (max. 100 mA) * Low voltage (max. 65 V). APPLICATIONS * General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complements: BC856W, BC857W and BC858W. MARKING PINNING BC846W; BC847W; BC848W PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 3 1 TYPE NUMBER BC846W BC846AW BC846BW BC847W BC847AW BC847BW BC847CW BC848W Note 1. * = -: made in Hong Kong. * = t: made in Malaysia. MARKING CODE(1) 1D* 1A* 1B* 1H* 1E* 1F* 1G* 1M* Fig.1 Simplified outline (SOT323; SC70) and symbol. 2 1 Top view 2 MAM062 2002 Feb 04 2 Philips Semiconductors Product specification NPN general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO BC846W BC847W BC848W VCEO collector-emitter voltage BC846W BC847W BC848W VEBO emitter-base voltage BC846W; BC847W BC848W IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open collector open base PARAMETER collector-base voltage BC846W; BC847W; BC848W CONDITIONS open emitter - - - - - - - - - - - Tamb 25 C; note 1 - MIN. MAX. 80 50 30 65 45 30 6 5 100 200 200 200 +150 150 +150 V V V V V V V V UNIT mA mA mA mW C C C -65 - -65 CONDITIONS in free air; note 1 VALUE 625 UNIT K/W 2002 Feb 04 3 Philips Semiconductors Product specification NPN general purpose transistors CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current BC846W; BC847W; BC848W CONDITIONS VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tj = 150 C MIN. - - - - - - TYP. - - - 90 150 270 - - 180 290 520 90 200 700 900 660 - - - - MAX. 15 5 100 - - - 450 800 220 450 800 250 600 - - 700 770 3 - 10 UNIT nA A nA IEBO hFE emitter-base cut-off current DC current gain BC846AW; BC847AW BC846BW; BC847BW; BC848BW BC847CW DC current gain BC846W BC847W; BC848W BC846AW; BC847AW BC846BW; BC847BW BC847CW VEB = 5 V; IC = 0 IC = 10 A; VCE = 5 V IC = 2 mA; VCE = 5 V 110 110 110 200 420 IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 - - - - 580 - - 100 - VCEsat collector-emitter saturation voltage mV mV mV mV mV mV pF MHz dB VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 VBE Cc fT F base-emitter voltage collector capacitance transition frequency noise figure IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V VCB = 10 V; IE = Ie = 0; f = 1 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz IC = 200 A; VCE = 5 V; RS = 2 k; f = 1 kHz; B = 200 Hz Note 1. Pulse test: tp 300 s; 0.02. 2002 Feb 04 4 Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W; BC848W handbook, halfpage 400 MGT723 handbook, halfpage V hFE (1) 1200 BE (mV) 1000 MGT724 300 800 (1) (2) 200 (2) 600 (3) (3) 400 100 200 0 10-1 1 10 102 I C (mA) 103 0 10-1 1 10 102 I C (mA) 103 BC847AW; VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. BC847AW; VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. 103 handbook, halfpage VCEsat (mV) MGT725 handbook, halfpage 1200 VBEsat (mV) 1000 MGT726 (1) 800 (2) 102 (1) (2) (3) 600 (3) 400 200 10 10-1 1 10 102 I C (mA) 103 0 10-1 1 10 102 I C (mA) 103 BC847AW; IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. BC847AW; IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2002 Feb 04 5 Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W; BC848W handbook, halfpage 600 MGT727 handbook, halfpage (1) hFE 500 1200 VBE (mV) 1000 MGT728 (1) 400 (2) 800 (2) 300 600 (3) 200 (3) 400 100 200 0 10-1 1 10 102 I C (mA) 103 0 10-2 10-1 1 10 102 103 I C (mA) BC847BW; VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. BC847BW; VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.6 DC current gain as a function of collector current; typical values. Fig.7 Base-emitter voltage as a function of collector current; typical values. 104 handbook, halfpage VCEsat (mV) 103 MGT729 handbook, halfpage 1200 VBEsat (mV) 1000 MGT730 (1) 800 (2) 600 (3) 102 (1) 400 (3) (2) 200 10 10-1 1 10 102 I C (mA) 103 0 10-1 1 10 102 I C (mA) 103 BC847BW; IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. BC847BW; IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. 2002 Feb 04 6 Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W; BC848W handbook, halfpage 1200 MGT731 handbook, halfpage hFE 1000 (1) 1200 VBE (mV) 1000 MGT732 800 (2) 800 (1) (2) 600 600 400 (3) 400 (3) 200 200 0 10-1 1 10 102 I C (mA) 103 0 10-2 10-1 1 10 102 103 I C (mA) BC847CW; VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. BC847CW; VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.10 DC current gain as a function of collector current; typical values. Fig.11 Base-emitter voltage as a function of collector current; typical values. 104 handbook, halfpage VCEsat (mV) 103 MGT733 handbook, halfpage V 1200 BEsat (mV) 1000 MGT734 (1) 800 (2) 600 (3) 102 (1) 400 200 (3) (2) 10 10-1 1 10 102 I C (mA) 103 0 10-1 1 10 102 I C (mA) 103 BC847CW; IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. BC847CW; IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 2002 Feb 04 7 Philips Semiconductors Product specification NPN general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads BC846W; BC847W; BC848W SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2002 Feb 04 8 Philips Semiconductors Product specification NPN general purpose transistors DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development BC846W; BC847W; BC848W DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2002 Feb 04 9 Philips Semiconductors Product specification NPN general purpose transistors NOTES BC846W; BC847W; BC848W 2002 Feb 04 10 Philips Semiconductors Product specification NPN general purpose transistors NOTES BC846W; BC847W; BC848W 2002 Feb 04 11 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp12 Date of release: 2002 Feb 04 Document order number: 9397 750 09166 |
Price & Availability of BC847W
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |